View SI1427EDH_8966978.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

vishay siliconix SI1427EDH new product document number: 65526 s11-0453-rev. b, 14-mar-11 www.vishay.com 1 this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? typical esd performance 2000 v ? built in esd protection with zener diode ? compliant to rohs directive 2002/95/ec applications ? load switch for portable devices - cellular phone - dsc - portable game console - mp3 - gps product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) - 20 0.064 at v gs = - 4.5 v - 2.0 e 7.6 nc 0.085 at v gs = - 2.5 v - 2.0 e 0.110 at v gs = - 1.8 v - 2.0 e 0.165 at v gs = - 1.5 v - 0.5 p-channel mosfet s d r g markin g code br xx lot tracea b ility and date code part # code yy orderin g information: SI1427EDH-t1-ge3 (lead (p b )-free and halogen-free) sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top v ie w d d g d d s notes: a. t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 125 c/w. e. package limited. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 2.0 a, e a t c = 70 c - 2.0 e t a = 25 c - 2.0 b, c, e t a = 70 c - 2.0 b, c, e pulsed drain current i dm - 8 continuous source-drain diode current t c = 25 c i s - 2.0 a, e t a = 25 c - 1.3 b, c maximum power dissipation t c = 25 c p d 2.8 w t c = 70 c 1.8 t a = 25 c 1.56 b, c t a = 70 c 1 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 5 s r thja 60 80 c/w maximum junction-to-foot (drain) steady state r thjf 34 45
www.vishay.com 2 document number: 65526 s11-0453-rev. b, 14-mar-11 vishay siliconix SI1427EDH new product this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 13 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 6 a v ds = 0 v, v gs = 4.5 v 0.5 zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 8 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 3.0 a 0.050 0.064 v gs = - 2.5 v, i d = - 2.0 a 0.065 0.085 v gs = - 1.8 v, i d = - 1.0 a 0.090 0.110 v gs = - 1.5 v, i d = - 0.5 a 0.110 0.165 forward transconductance a g fs v ds = - 10 v, i d = - 3.0 a 12 s dynamic b total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 5.3 a 14 21 nc gate-source charge v ds = - 10 v, v gs = - 4.5 v, i d = - 5.3 a 7.6 12 q gs 0.8 gate-drain charge q gd 3.1 gate resistance r g f = 1 mhz 0.4 2 4 k tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.3 i d ? - 4.3 a, v gen = - 4.5 v, r g = 1 0.20 0.3 s rise time t r 1.00 1.50 turn-off delay time t d(off) 4.00 6.00 fall time t f 2.00 3.00 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.3 i d ? - 4.3 a, v gen = - 8 v, r g = 1 0.09 0.14 rise time t r 0.40 0.60 turn-off delay time t d(off) 5.20 7.80 fall time t f 2.30 3.50 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 2.0 a pulse diode forward current i sm - 8 body diode voltage v sd i s = - 3 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 3 a, di/dt = 100 a/s, t j = 25 c 30 60 ns body diode reverse recovery charge q rr 20 40 nc reverse recovery fall time t a 13 ns reverse recovery rise time t b 17
document number: 65526 s11-0453-rev. b, 14-mar-11 www.vishay.com 3 vishay siliconix SI1427EDH new product this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) gate current vs. gate-source voltage output characteristics on-resistance vs. drain current v gs - gate-to-so u rce v oltage ( v ) i gss - gate c u rrent (ma) 0.0 0.3 0.6 0.9 1.2 1.5 03691215 t j = 25 c 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5 v thr u 2.5 v v gs =1 v v gs =2 v v gs =1.5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0.00 0.03 0.06 0.09 0.12 0.15 0.1 8 0.21 04 8 12 16 20 v gs =1. 8v v gs =4.5 v v gs =1.5 v v gs =2.5 v gate current vs. gate-source voltage transfer characteristics gate charge v gs - gate-to-so u rce v oltage ( v ) i gss - gate c u rrent (a) 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 0 3 6 9 12 15 t j = 25 c t j = 150 c 0 2 4 6 8 10 0.0 0.4 0. 8 1.2 1.6 2.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 2 4 6 8 0 3 6 9 12 15 v ds =16 v i d =5.3a v ds =5 v v ds =10 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs
www.vishay.com 4 document number: 65526 s11-0453-rev. b, 14-mar-11 vishay siliconix SI1427EDH new product this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 v gs =4.5 v ,2.5 v ;i d =3.2a v gs =1. 8v ;i d =1.5a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0.00 0.03 0.06 0.09 0.12 0.15 0.1 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i d = 3.2 a; t j = 25 c i d =0.5a;t j =25 c i d = 3.2 a; t j = 125 c i d =0.5a;t j = 125 c 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 power (w) time (s) soure-drain diode forward voltage threshold voltage safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.3 0.4 0.5 0.6 0.7 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) 0.01 0.1 1 10 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 10 s 100 ms limited by r ds(on) * 1 ms t single pulse a = 25 c bvdss limited 10 ms 1 s dc
document number: 65526 s11-0453-rev. b, 14-mar-11 www.vishay.com 5 vishay siliconix SI1427EDH new product this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 1 2 3 4 5 6 0 25 50 75 100 125 150 i d - drain current (a) t f - foot temperature ( c) package limited power derating 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 power (w) t c - foot temperature ( c)
www.vishay.com 6 document number: 65526 s11-0453-rev. b, 14-mar-11 vishay siliconix SI1427EDH new product this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65526 . normalized thermal transient im pedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse normalized thermal transient impedance unction-to-foot 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
l c e e 1 e d e 1 a 2 a a 1 1 -a- b -b- 23 654 package information vishay siliconix document number: 71154 06-jul-01 www.vishay.com 1

dim min nom max min nom max a 0.90 ? 1.10 0.035 ? 0.043 a 1 ? ? 0.10 ? ? 0.004 a 2 0.80 ? 1.00 0.031 ? 0.039 b 0.15 ? 0.30 0.006 ? 0.012 c 0.10 ? 0.25 0.004 ? 0.010 d 1.80 2.00 2.20 0.071 0.079 0.087 e 1.80 2.10 2.40 0.071 0.083 0.094 e 1 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65bsc 0.026bsc e 1 1.20 1.30 1.40 0.047 0.051 0.055 l 0.10 0.20 0.30 0.004 0.008 0.012 7 nom 7 nom ecn: s-03946?rev. b, 09-jul-01 dwg: 5550
an815 vishay siliconix document number: 71334 12-dec-03 www.vishay.com 1 single-channel little foot sc-70 6-pin mosfet copper leadframe version recommended pad pattern and thermal performance introduction the new single 6-pin sc-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal performance as compared to the existing 3-pin and 6-pin packages with alloy 42 leadframes. these devices are intended for small to medium load applications where a miniaturized package is required. devices in this package come in a range of on-resistance values, in n-channel and p-channel versions. this technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for the single-channel version. basic pad patterns see application note 826, recommended minimum pad patterns with outline drawing access for vishay siliconix mosfet s, ( http://www.vishay.com/doc?72286 ) for the basic pad layout and dimensions. these pad patterns are sufficient for the low to medium power applications for which this package is intended. increasing the drain pad pattern yields a reduction in thermal resistance and is a preferred footprint. the availability of four drain leads rather than the traditional single drain lead allows a better thermal path from the package to the pcb and external environment. pin-out figure 1 shows the pin-out description and pin 1 identification.the pin-out of this device allows the use of four pins as drain leads, which helps to reduce on-resistance and junction-to-ambient thermal resistance. figure 1. sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top view d d g d d s for package dimensions see outline drawing sc-70 (6-leads) ( http://www.vishay.com/doc?71154 ) evaluation boards single sc70-6 the evaluation board (evb) measures 0.6 inches by 0.5 inches. the c opper pad traces are the same as in figure 2. the board allows examination from the outer pins to 6-pin dip connections, permitting test sockets to be used in evaluation testing. see figure 3. figure 2. sc-70 (6 leads) single 52 (mil) 96 (mil) 13 (mil) 71 (mil) 0, 0 (mil) 18 (mil) 16 (mil) 26 (mil) 26 (mil) 654 3 2 1 the thermal performance of the single 6-pin sc-70 has been measured on the evb, comparing both the copper and alloy 42 leadframes. this test was first conducted on the traditional alloy 42 leadframe and was then repeated using the 1-inch 2 pcb with dual-side copper coating.
an815 vishay siliconix www.vishay.com 2 document number: 71334 12-dec-03 figure 3. front of board sc70-6 back of board sc70-6 vishay.com thermal performance junction-to-foot thermal resistance (package performance) the junction to foot thermal resistance is a useful method of comparing different packages thermal performance. a helpful way of presenting the thermal performance of the 6-pin sc-70 copper leadframe device is to compare it to the traditional alloy 42 version. thermal performance for the 6-pin sc-70 measured as junction-to-foot thermal resistance, where the ?foot? is the drain lead of the device at the bottom where it meets the pcb. the junction-to-foot thermal resistance is typically 40 c/w in the copper leadframe and 163 c/w in the alloy 42 leadframe ? a four-fold improvement. this improved performance is obtained by the enhanced thermal conductivity of copper over alloy 42. power dissipation the typical r ja for the single 6-pin sc-70 with copper leadframe is 103 c/w steady-state, compared with 212 c/w for the alloy 42 version. the figures are based on the 1-inch 2 fr4 test board. the following example shows how the thermal resistance impacts power dissipation for the two different leadframes at varying ambient temperatures. alloy 42 leadframe room ambient 25 c elevated ambient 60 c p d t j(max) t a r ja p d 150 o c 25 o c 212 o c w p d 590 mw p d t j(max) t a r ja p d 150 o c 25 o c 212 o c w p d 425 mw cooper leadframe room ambient 25 c elevated ambient 60 c p d t j(max) t a r ja p d 150 o c 25 o c 124 o c w p d 1.01 w p d t j(max) t a r ja p d 150 o c 60 o c 124 o c w p d 726 mw as can be seen from the calculations above, the compact 6-pin sc-70 copper leadframe little foot power mosfet can handle up to 1 w under the stated conditions. testing to further aid comparison of copper and alloy 42 leadframes, figure 5 illustrates single-channel 6-pin sc-70 thermal performance on two dif ferent board sizes and two different pad patterns. the measured steady-state values of r ja for the two leadframes are as follows: little foot 6-pin sc-70 alloy 42 copper 1) minimum recommended pad pattern on the evb board v (see figure 3. 329.7 c/w 208.5 c/w 2) industry standard 1-inch 2 pcb with maximum copper both sides. 211.8 c/w 103.5 c/w the results indicate that designers can reduce thermal resistance (r ja ) by 36% simply by using the copper leadframe device rather than the alloy 42 version. in this example, a 121 c/w reduction was achieved without an increase in board area. if increasing in board size is feasible, a further 105 c/w reduction could be obtained by utilizing a 1-inch 2 square pcb area. the copper leadframe versions have the following suffix: single: si14xxedh dual: si19xxedh complementary: si15xxedh
an815 vishay siliconix document number: 71334 12-dec-03 www.vishay.com 3 time (secs) figure 4. leadframe comparison on evb thermal resistance (c/w) 0 1 400 80 160 100 1000 240 10 10 -1 10 -2 10 -3 10 -4 10 -5 alloy 42 320 time (secs) figure 5. leadframe comparison on alloy 42 1-inch 2 pcb thermal resistance (c/w) 0 1 250 50 100 100 1000 150 10 10 -1 10 -2 10 -3 10 -4 10 -5 200 copper copper alloy 42
application note 826 vishay siliconix www.vishay.com document number: 72602 18 revision: 21-jan-08 application note recommended minimum pads for sc-70: 6-lead 0.096 (2.438) recommended mi nimum pads dimensions in inches/(mm) 0.067 (1.702) 0.026 (0.648) 0.045 (1.143) 0.016 (0.406) 0.026 (0.648) 0.010 (0.241) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 08-feb-17 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. ? 2017 vishay intertechnology, inc. all rights reserved

▲Up To Search▲

Price & Availability of SI1427EDH

	To Download SI1427EDH Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .